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MRFE6S9205HR3 MRFE6S9205HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
?
Typical Single-Carrier W-CDMA Performance: VDD
= 28 Volts, I
DQ
=
1400 mA, Pout
= 58 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5
dB @ 0.01% Probability on CCDF.
Power Gain ? 21.2 dB
Drain Efficiency ? 34%
Device Output Signal PAR ? 6.3 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset ? -39.1 dBc in 3.84 MHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout
= 260 W CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Features
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
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Integrated ESD Protection
?
Optimized for Doherty Applications
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +66
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 202 W CW
Case Temperature 77°C, 58 W CW
RθJC
0.27
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access the MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRFE6S9205HR3
MRFE6S9205HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRFE6S9205HSR3
CASE 465B-03, STYLE 1
NI-880
MRFE6S9205HR3
Document Number: MRFE6S9205H
Rev. 0, 10/2007
Freescale Semiconductor
Technical Data
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Freescale Semiconductor, Inc., 2007. All rights reserved.
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